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lithography-cd-control-jmp

JMP-based lithography line-width CD control, SPC, ANOVA, and process capability analysis using NIST wafer data.

Lithography Line-Width CD Control and SPC Analysis Using NIST Wafer Data

Overview

This project uses JMP to analyze lithography line-width critical-dimension variation using the NIST LITHOGRA.DAT process-control dataset.

The goal was to identify whether CD variation was mainly associated with:

  • Cassette-to-cassette shifts
  • Wafer-position effects
  • Site-level within-wafer non-uniformity
  • Measurement-sequence behavior

Dataset

Source: NIST/SEMATECH e-Handbook of Statistical Methods Dataset: LITHOGRA.DAT Response variable: Raw_LineWidth Total observations: 450

Dataset structure:

  • 30 cassettes
  • 3 wafers per cassette
  • 5 measurement sites per wafer
  • Sites: Top, Left, Center, Right, and Bottom

JMP Analysis Workflow

  • Distribution and summary statistics
  • Boxplots by wafer site, wafer position, and cassette
  • Sequence run chart
  • Wafer-within-cassette summary
  • ANOVA using Standard Least Squares
  • Individuals and Moving Range control chart
  • X-bar and S control chart by cassette
  • Cp/Cpk and Pp/Ppk process capability analysis

Key Results

  • Mean line width: 2.532 µm

  • Cassette and wafer site were statistically significant: p < 0.0001

  • Wafer position was not statistically significant: p = 0.8871

  • The ANOVA model explained approximately 80.8% of the observed variation

  • Cassette-level mean CD was unstable in the X-bar chart

  • Within-cassette standard deviation was comparatively stable in the S chart

  • Under assumed specification limits of 1.5–3.5 µm:

    • Cpk = 0.723
    • Ppk = 0.465
    • Observed nonconformance = 133,333 PPM

Process-Engineering Conclusion

Cassette-level mean shifts and wafer-site non-uniformity were the dominant sources of lithography CD variation.

Wafer position within the cassette was not a significant contributor.

The process was not statistically stable at the cassette-mean level and was not capable under the assumed specification limits.

Selected Results

Overall Line-Width Distribution

Overall line-width distribution

Site-Level CD Variation

Line width by wafer site

Wafer-Position Effect

Line width by wafer position

Cassette-to-Cassette CD Variation

Cassette-to-cassette variation

Sequence Run Chart

Sequence run chart

Wafer-Within-Cassette Mean CD

Wafer within cassette mean line width

ANOVA Results

ANOVA results

Individuals and Moving Range Control Chart

IMR control chart

X-bar and S Control Chart

X-bar and S control chart

Process Capability

Process capability Process capability

Recommended Follow-Up Actions

  • Investigate exposure dose and focus uniformity
  • Review resist coating and development uniformity
  • Check for cassette-to-cassette tool or process drift
  • Review metrology repeatability and measurement-location effects
  • Repeat capability analysis using official product specification limits

Project Files

Notes

The NIST dataset does not provide official LSL, USL, or target CD values. Assumed specification limits were used only to demonstrate the JMP process capability workflow and should not be interpreted as official product requirements.

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JMP-based lithography line-width CD control, SPC, ANOVA, and process capability analysis using NIST wafer data.

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