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Question about input parameters for the E3 case #262

@choi-geunseok

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@choi-geunseok

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What are the SLEM parameters for the Si case in the ICLR paper?
I am also curious about the settings for other materials like GaN and HfO₂.
Currently, the Hamiltonian error is at the level of 1e-2 eV, so I am not sure exactly what should be improved.

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